Graphene FET on Diamond for High-Frequency Electronics

Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The charge-carrier mobility saturation velocity in graphene can open way for ultra-fast field-effect transistors with a performance even better than what be achieved III-V-based semiconductors. However, progress high-speed has been hampered by fabrication issues, influence adjacent materials, self-heating effects. Here, we report on improved (GFETs) obtained using diamond substrate. An extrinsic maximum frequency oscillation ${f}_{{\mathrm {max}}}$ up to 54 GHz was gate length 500 nm. Furthermore, thermal conductivity provides an efficient heat-sink, relatively optical phonon energy contributes increased channel. Moreover, show that GFETs exhibit excellent scaling behavior different lengths. These results promise GFET-on-diamond technology potential reaching sub-terahertz performance.